Multiband Simulation of Quantum Transport in GaAs/AlAs Resonant Tunneling Diodes (RTDs)
| GaAs DBRTD | Si ITD | type II RITD | Download |
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| Band structures, and carrier concentrationsat current peak. | Local density of states , band profile, a quasi-bound state and resonant levels in the GaAs/AlAs RTD(SB model) under the (1st) resonant condition.The contribution of states from the transverseenergies have been ignored for clarity. |
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| Comparison of complex band structures ofsingle band model (SB) and multiband model(MB). Right portion (Imkz) indicates the decayingmodes while the left corresponds to the propagatingmodes. |
Local density of states, band profile, quasi-boundstates and resonant levels in the GaAs/AlAsRTD (SB model) under off-resonant condition(at higher bias voltage).The contribution of states from the transverseenergies have been ignored for clarity. |
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| Comparison of I-V characteristics | Local density of states , band profile, a quasi-bound state in the GaAs/AlAs RTD (SB model) under the(1st) resonant condition without any scattering. (Note this model has spacer regions attachedto the barriers.) The contribution of statesfrom the transverse energies have been ignoredfor clarity. Wavefunction smearing into the GaAs bandgap via evanescent mode(s) is aloso seen(below the white conduction band profile). |
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| Local density of states , band profile, a quasi-bound state in the GaAs/AlAs RTD (SB model) under the(1st) resonant condition using the conventionalMSS algorithm. The resonant level broadeningis overestimated in this algorithm. For reference: click here and here |
Local density of states , band profile, aquasi-bound state in the GaAs/AlAs RTD (SBmodel) under the (1st) resonant condition with polar optical phonon (POP) scattering under a new algorithm. Phonon reprica dueto the POP is clearly seen above the 1stresonant level. The existence of the phonon levels is oneof the reason the I-V characteristice degradein the presence of POP. |
