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Multiband Simulation of Quantum Transport in a Poly Type Double Barrier Resonant Interband Tunneling Diode (DBRTD)
GaAs DBRTD Si ITD type II RITD Download
Schematic structure of GaSb/AlSb/InAs DBRITD(left). I-V characteristics (right). AfterDr. Kitabayashi et al. (NTT).
Complex band structures of InAs (a) and GaSb(b).
Model structure. I-V characteristics of the AlSb/GaSb DBRITDsimulated by the MB model(solid line) and2-band model(dotted line) where only theconduction- and the light hole bands aretaken into account.
 
Well width dependences of the peak currentdensity.The 2-band model cannot explainthebehavior for the Lw < 12 ML.
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