Ogawa's Home Page Kobe University School of Electrical and Electronics Engineering

Band Calculation of Si (diamond)

InAs GaN Si GaAs GaSb

Isosurfaces

(Top left) Isosurfaces (E = 1.0eV)of theSi crystal calculated by an ab InitioBandcalculation developed in my group.(Top Rightand Bottoms) One of them(enlarged)whichmay be approximated by a rotary ellipsoid.
A contour plot

Approximated by a tight-binding approximation

The 6 equipotential rotary ellipsoidsinthe CB approximated by the extractedNN TBparameters.
Note these shapes are not rotary ellipsoids,but have cylindrical symmetry.

contour plot

TO PAGETOP