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Research

◆ Research at Kobe University

Computational Nano-Electronics -- from Atom & Molecule to Nano Devices
(a) Electron Distribution in Si Crystal   (b) Melecular Orbital in Naphthalene  (c)Contour Plot of Electron Distribution in Rock Salt
(d) 1st Brillouin Zone of Si Crystal and 6 Rotated Ellipsoids in the CB.   (e) Orbitals in a Hydrogen Atom expressed in Polar Coordinate  
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Japanese
Vision Map
Parallel Computing
(MPI, HPF, PVM, etc. Pentium IVx 10; Pentium IVx 18) in Quantum Transport Simulation, Molecular, and Ab Initio Band Calculation

Multiband Simulation of Quantum Transport in Quantum Devices
(Based on the Multiband Green's Function Method)

GaAs/AlAs RTD: used for a terahertz microwave generation and high speed logic circuits with less device numbers compared with conventional logics used in SRAMs. Proper treatment of the material bandstructure properties, such as non-parabolicity, band-warping, and Gamma-X transistions.

Si ITD: suitable for device miniaturization below 25 nm gate length where most FETs suffer with quantum effects.

GaSb/InSb type II ITD: can be used for logics with high peak to valley current ratio.

Comparison of Tunneling Diodes(ITD, RITD, RTD)

2D and 3D Modeling (Quantum Wires and Quantum Dots)

Corrugated Quantum Wire: high spatial density of QWRs on a (7 7 5) or (n n 1) oriented substrate with higher gain. (cooperative study with Prof. Hiyamizu's group who invented the structure).

Electronic States and Optical Properties of Quantum Dots: can be used for the optical lasers, sensors, memory and logic, as well as alternative computing concepts as quntum cellular automata.


A Lanczos code is used for a large scale matrix eigenvalue problem.
I am grateful for Dr. Jane A. Cullum at IBM T.J. Watson research center for her discussion.
I also thank Mr. Nestor Bojarczuk for his information.
Ab Initio Band Calculations (LSDA and GGA) and Tight-Binding Parameter Extraction(by a genetic algorithm)

InAs: material extensively studied for laser application.

GaN: material for blue light source and electronic devices at higher temperature.

Si: can be used for single / a few tens electron(s) memory and/or light source.

GaAs: material mostly used for high frequency FETs. We need the properties for the quantum transport simulation.

AlAs: we need the properties for the quantum transport simulation.

GaSb: we need the properties for the quantum transport simulation.


ITRS Modeling 2006 Update
ITRS 2009 Edition
ITRS

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