Analysis of Electronic States and Optical Properties of Quantum Dots(QDs) by k.p / Tight Binding Simulation
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Model of an InAs QD. The dot is surroundedby GaAs barriers. | Strain distribution in the QD structure calculatedby a continuous model.The boundaries amongthe dot and the barriers (red area). |
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Probability density in the ground state ofthe strained InAs QD. |
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