Ogawa's Home Page Kobe University School of Electrical and Electronics Engineering
Analysis of Electronic States and Optical Properties of Quantum Dots(QDs) by k.p / Tight Binding Simulation
Quantum Wire Quantum Dot Download
Model of an InAs QD. The dot is surroundedby GaAs barriers. Strain distribution in the QD structure calculatedby a continuous model.The boundaries amongthe dot and the barriers (red area).
Probability density in the ground state ofthe strained InAs QD.
A rice ball centered with a solty Japanseapricot wrapped with sea weed.
Probability density of the ground state ofheavy hole (HH1). Same as above.
 
Distribution of atoms calculated by a tight-bindingmolecular dynamics (TBMD) method.  
TO PAGETOP