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シリカ(SiO2)およびシリコン(Si)関連材料
アモルファスシリカ微粒子透明焼結体(7 nm, fumed silica calcinated at 980oC for 168h)
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 Emission quantum yield: ca 1% |
| PL: 500 nm PLE: below 280 nm |
Fast component:Single exponential decay Slow component: Stretched exponential decay |
Ref: T. Uchino and T. Yamada, APL 85, 1164 (2004); T. Yamada and T. Uchino, APL 87, 081904 (2005) |
アモルファスシリカ微粒子(7 nm, fumed silica calcinated at 300oC for 2h)
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 Emission quantum yield: 2-3 % |
| PL: 435 nm PLE: 250 and 350 nm |
Stretched exponential decay: τ=1.3 ns, β=0.50 |
Ref: T. Uchino, N. Kurumoto, and N. Sagawa, PRB 73, 233203 (2006); A. Aboshi, N, Kurumoto, T. Yamada, and T. Uchino, JPCC 111, 8483 (2007) |
シリカベース有機無機複合発光体
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 Emission quantum yield: ca 20 % |
| PL: 400-450 nm PLE: 350 nm |
Triple exponential decay: decay constants: 4, 20, 70 ns |
Ref: A. Nishimura, N. Sagawa, and Uchino, JPCC 113, 4260 (2009) |
Si微粒子(prepared by an electron beam evaporation method with SiO and SiO2 particles)
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 Emission quantum yield: ca 1 % |
| PL: 730-760 nm PLE: below 370 nm |
Stretched exponential decay: τ=10-50 μs, β=0.52-0.56 |
Ref: E. Koyanagi and T. Uchino, APL 91, 041910 (2007); D. Gautam, E. Koyabnagi, and T. Uchino, JAP 105, 073517 (2009) |